ZVN2120G Datasheet | Zetex Semiconductors

FEATURES : - VDS - 200V - RDS(ON) - 10Ω 7 PARTMARKING DETAIL - ZVN2120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 320 2 ± 20 2 -55 to +150 UNIT V m A A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 200 1 3 20 10 100 500 10 100 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS. V V n A µA µA m A Ω m S p F p F p F ns ns ns ns V DD≈ 25V, I D=250m A V DS=25V, V GS=0V, f=1MHz I D=1m A, V GS=0V I D =1m A, V DS= V GS V GS= ± 20V, V DS=0V V DS=200V, V GS=0V V DS=160V, V GS=0V, T=125°C (2) V DS=25V, V GS=10V V GS=10V, I D=250m A V DS=25V, I D=250m A Gate-Source Threshold Voltage V GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) I GSS I DSS I D(on) R DS(on) Forward Transconductance(1)(2) g fs Input Capacitance (2) mon Source Output Capacitance (2) C iss C oss Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator - 390 TYPICAL CHARACTERISTICS ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 5V ID(on) -On-State Drain Current (Amps) 1.4 1.2 10V VGS= 8V 7V 6V 5V 4V 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 4V 3V 2V 0 10 20 30 40 50 3V 2V - Drain Source Voltage...