ZXM41N0F Datasheet | Zetex Semiconductors

FEATURES - BVDSS = 100V - Low Threshold DEVICE MARKING - 410 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb =25°C Pulsed drain current Gate-source voltage Power dissipation at T amb =25°C Operating and storage temperature range PINOUT TOP VIEW SYMBOL V DS V DGR ID I DM V GS P tot T j :T stg VALUE 100 100 170 680 ± 20 360 -55 to +150 SOT23 UNIT V V m A m A V m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Drain-source breakdown voltage Gate-source threshold voltage Gate-body leakage Zero gate voltage drain current Static drain-source on-state resistance (1) Forward transconductance (1)(2) Input capacitance (2) mon source output capacitance (2) Reverse transfer capacitance (2) Turn-on delay time Rise time (2)(3) (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 80 100 0.5 TYP. MAX. UNIT CONDITIONS V I D =0.25m A, V GS =0V I =1m A, V DS = V GS 1.5 50 500 8 12 V n A n A ⍀ ⍀ m S V GS = ± 20V , V DS =0V V DS =100V, V GS =0V V GS =4.5V, I D =150m A V GS =3V, I D =50m A V DS =25V, I D =100m A 25 9 4 10 10 15 25 p F p F p F ns ns ns ns V DD ≈ 30V, I D =280m A V DS =25V, V GS =0V, f=1MHz Turn-off delay time (2)(3) Fall time (2)(3) NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ISSUE 1 - JANUARY 2004 1 SEMICONDUCTORS PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM A B C D F G Min 2.67 1.20 ᎏ 0.37 0.085 Max 3.05 1.40 1.10 0.53 0.15 Inches Min 0.105 0.047 ᎏ 0.015 0.0034 Max 0.120 0.055 0.043 0.021 0.0059 DIM H K L M N ⍜ Millimeters Min 0.33 0.01 2.10 0.45 Max 0.51 0.10 2.50 0.64 Inches Max 0.013 0.0004 0.083 0.018 Max 0.020 0.004 0.0985 0.025 0.95 NOM 10Њ TYP 0.0375 NOM...