• Part: ZXMN3B01F
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Zetex Semiconductors
  • Size: 492.46 KB
Download ZXMN3B01F Datasheet PDF
Zetex Semiconductors
ZXMN3B01F
ZXMN3B01F is N-Channel MOSFET manufactured by Zetex Semiconductors.
DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that bines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES - Low on-resistance - Fast switching speed - Low threshold - Low gate drive - SOT23 package SOT23 APPLICATIONS - DC-DC Converters - Power Management functions - Disconnect switches - Motor control ORDERING INFORMATION DEVICE ZXMN3B01FTA ZXMN3B01FTC REEL SIZE 7” 13” TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units PINOUT DEVICE MARKING - 3B1 TOP VIEW ISSUE 1 - DECEMBER 2005 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V GS =4.5V; T A =25°C (b) @ V GS =4.5V; T A =70°C (b) @ V GS =4.5V; T A =25°C (a) Pulsed Drain Current (c) SYMBOL V DSS V GS ID LIMIT 30 Ϯ12 2.0 1.6 1.7 UNIT V V A A A A A A m W m W/°C m W m W/°C °C I DM IS I SM PD PD T j , T stg 9.4 1.3 9.4 625 5 806 6.4 -55 to +150 Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C Linear Derating Factor Operating and Storage Temperature Range (b) THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R ⍜ JA R ⍜ JA VALUE 200 155 UNIT °C/W °C/W Junction to Ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t Յ 5 sec. (c) Repetitive...