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AOP607 Datasheet PDF

Alpha & Omega Semiconductors AOP607

The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications).
Part No. AOP607
Datasheet AOP607 Download
Manufacturer
Alpha & Omega Semiconductors
Description MOSFET
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AOP607 datasheet page 1 preview

GENERAL DESCRIPTION

AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical.

FEATURES

n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 56m Ω (VGS=10V) < 105mΩ (VGS =-10V) < 77m Ω (VGS=4.5V) < 135mΩ (VGS =-4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 ±20 -3.4 -2.7 -20 2.5 1.6 -55 to 150 Typ 37 74 28 35 73 32 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD ±20 4.7 3.8 20 2.5 1.6 -55 to 150 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch W °C TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambi...
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