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CSD16410Q5A - N-Channel Power MOSFET

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Key Features

  • 1.
  • 2 Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5mm x 6mm Plastic Package VDS Qg Qgd RDS(on) VGS(th).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD16410Q5A www.ti.com SLPS205A – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16410Q5A FEATURES 1 •2 Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5mm x 6mm Plastic Package VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 3.9 Gate Charge Gate to Drain 1.1 Drain to Source On Resistance Threshold Voltage VGS = 4.5V VGS = 10V 1.9 V nC nC 9.6 mΩ 6.