CSD16411Q3 Datasheet | Texas Instruments

Features - 1 Ultra-Low Qg and Qgd - Low-Thermal Resistance - Avalanche Rated - Lead-Free Terminal Plating - Ro HS pliant - Halogen Free - SON 3.3-mm × 3.3-mm Plastic Package 2 Applications - Point-of-Load Synchronous Buck Converter for Applications in Networking, Tele and puting Systems - Optimized for Control FET Applications 3 Description This 25-V, 8-mΩ, 3.3-mm × 3.3-mm SON Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View Product Summary TA = 25°C Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 4.5 V VGS = 10 V UNIT V n C n C mΩ DEVICE CSD16411Q3 CSD16411Q3T Device Information(1) MEDIA PACKAGE...