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CSD17579Q3A - 30V N-Channe Power MOSFET

Datasheet Summary

Description

This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Features

  • 1 Low Qg and Qgd.
  • Low RDS(on).
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3 mm × 3.3 mm Plastic Package 2.

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Datasheet preview – CSD17579Q3A

Datasheet Details

Part number CSD17579Q3A
Manufacturer Texas Instruments
File Size 685.76 KB
Description 30V N-Channe Power MOSFET
Datasheet download datasheet CSD17579Q3A Datasheet
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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17579Q3A SLPS527A – SEPTEMBER 2014 – REVISED JANUARY 2016 CSD17579Q3A 30 V N-Channel NexFET™ Power MOSFETs 1 Features •1 Low Qg and Qgd • Low RDS(on) • Low Thermal Resistance • Avalanche Rated • Pb-Free • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Optimized for Control FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 5.3 1.2 VGS = 4.5 V VGS = 10 V 1.5 11.8 8.7 UNIT V nC nC mΩ mΩ V .
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