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CSD18503Q5A - Power MOSFETs

General Description

This 40 V, 3.4 mΩ, 5 x 6 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5 mm × 6 mm Plastic Package 2.

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Full PDF Text Transcription (Reference)

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD18503Q5A SLPS358C – JUNE 2012 – REVISED JUNE 2015 CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (4.5 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage TYPICAL VALUE 40 13 4.3 VGS = 4.5 V 4.7 VGS = 10 V 3.4 1.