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CSD18503Q5A Datasheet Power MOSFETs

Manufacturer: Texas Instruments

Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD18503Q5A SLPS358C – JUNE 2012 – REVISED JUNE 2015 CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET.

General Description

This 40 V, 3.4 mΩ, 5 x 6 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 D G4 Text added for spacing 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-source voltage VGS Gate-to-source voltage Continuous drain current (package limited), TC = 25°C ID Continuous drain current (silicon limited), TC = 25°C Continuous drain current, TA = 25°C(1) IDM Pulsed drain current, TA = 25°C(2) Power dissipation(1) PD Power dissipation, TC = 25°C TJ, Operating junction, Tstg Storage temperature EAS Avalanche energy, single pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω VALUE 40 ±20 100 121 19 321 3.1 120 –55 to 150 157 UNIT V V A A W °C mJ (1) Typical RθJA = 40°C/W on a 1 inch2, 2 oz.

Cu pad on a 0.06 inch thick FR4 PCB.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5 mm × 6 mm Plastic Package 2.

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