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CSD18504Q5A Datasheet 40v N-channel Power MOSFET

Manufacturer: Texas Instruments

Overview: CSD18504Q5A SLPS366F – JUNE 2012 – REVISED JANUARY 2025 CSD18504Q5A 40V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V).

General Description

This 5.3mΩ, SON 5mm × 6mm, 40V NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

S1 8D S2 7D S3 G4 D Top View 6D 5D P0093-01 20 18 TC = 25°C Id = 17A TC = 125ºC Id = 17A 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 40 Qg Gate Charge Total (4.5V) 7.7 Qgd Gate Charge Gate-to-Drain 2.4 RDS(on) Drain-to-Source On-Resistance VGS = 4.5V VGS = 10V 7.5 5.3 VGS(th) Threshold Voltage 1.9 UNIT V nC nC mΩ mΩ V Ordering Information (1) Device Qty Media Package Ship CSD18504Q5A 2500 13-Inch Reel CSD18504Q5AT 250 7-Inch Reel SON 5mm × 6mm Plastic Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 40 ±20 50 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C 75 A Continuous Drain Current(1) 15 IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 43A, L = 0.1mH, RG = 25Ω 275 A 3.1 W 77 –55 to 150 °C 92 mJ (1) Typical RθJA = 40°C/W on a 1-inch2 , 2oz.

Key Features

  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Logic level.
  • Pb free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • SON 5mm × 6mm plastic package 2.

CSD18504Q5A Distributor

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