CSD18534Q5A Overview
Description
This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (10 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage TYPICAL VALUE 60 17 3.5 VGS = 4.5 V VGS = 10 V 1.9 9.9 7.8 UNIT V nC nC mΩ mΩ V.
Key Features
- 1 Ultra-Low Qg and Qgd
- Low - Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5 mm × 6 mm Plastic Package
