CSD18534KCS Overview
Description
This 7.6mΩ, 60V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 32 TC = 25°C Id = 40A 28 TC = 125ºC Id = 40A 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 60 Qg Gate Charge Total (10V) 19 Qgd Gate Charge Gate-to-Drain 3.1 RDS(on) Drain-to-Source On-Resistance VGS = 4.5V VGS = 10V 10.2 7.6 VGS(th) Threshold Voltage 1.9 UNIT V nC nC mΩ mΩ V Device.
Key Features
- Ultra-low Qg and Qgd
- Low - Avalanche rated
- Pb-Free terminal plating
- RoHS compliant
- Halogen free
- TO-220 plastic package
