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CSD18534KCS - 60V N-Channel MOSFET

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General Description

This 7.6mΩ, 60V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 32 TC = 25°C Id = 40A 28 TC = 125ºC Id = 40A 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 60 Qg Gate Charge Total (10V) 19 Qgd Gate Charge Gate-to-Drain 3.1 RDS(on) Drain-to-Source On-Resistance VGS = 4.5V VGS = 10V 10.2 7.6 VGS(th) Threshold Voltage 1.9 UNIT V nC nC mΩ mΩ V Device Ordering Information(1) Package Media Qty Ship CSD18534KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 60 ±20 100 Continuous Drain Current (Silicon limited), ID TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) PD Power Dissipation TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 38A, L = 0.1mH, RG = 25Ω 73 52 164 107 –55 to 175 72 UNIT V V A A W °C mJ (1) Max RθJC = 1.3°C/W, pulse duration ≤100μs, duty cycle ≤1% 10 ID = 40A VDS = 30V 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 Qg - Gate Charge (nC) G001 Gate Charge An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes,

Overview

CSD18534KCS SLPS383C – SEPTEMBER 2012 – REVISED MARCH 2024 CSD18534KCS 60V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V).

Key Features

  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Logic level.
  • Pb-Free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • TO-220 plastic package 2.

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