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CSD18536KCS - 60V N-Channel MOSFET

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General Description

This 60V, 1.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 4 TC = 25° C, ID = 100 A 3.5 TC = 125° C, ID = 100 A 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V) D007 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 60 Qg Gate Charge Total (10V) 108 Qgd Gate Charge Gate-to-Drain 14 RDS(on) Drain-to-Source On-Resistance VGS = 4.5V VGS = 10V 1.7 1.3 VGS(th) Threshold Voltage 1.8 UNIT V nC nC mΩ mΩ V Ordering Information Device(1) Package Media Qty CSD18536KCS TO-220 Plastic Package Tube 50 Ship Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 60 ±20 200 Continuous Drain Current (Silicon limited), ID TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) PD Power Dissipation TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 128A, L = 0.1mH, RG = 25Ω 349 247 400 375 –55 to 175 819 UNIT V V A A W °C mJ (1) Max RθJC = 0.4°C/W, pulse duration ≤100μs, duty cycle ≤1%.

Overview

CSD18536KCS SLPS532C – JULY 2014 – REVISED MARCH 2024 CSD18536KCS 60V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V).

Key Features

  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Pb-free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • TO-220 plastic package 2.

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