Datasheet Details
| Part number | CSD18542KCS |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 492.46 KB |
| Description | Power MOSFETs |
| Datasheet | CSD18542KCS-etcTI.pdf |
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Overview: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18542KCS 60 V N-Channel NexFET™ Power MOSFET CSD18542KCS SLPS557 – JUNE 2015.
| Part number | CSD18542KCS |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 492.46 KB |
| Description | Power MOSFETs |
| Datasheet | CSD18542KCS-etcTI.pdf |
|
|
|
This 60 V, 3.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (10 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage TYPICAL VALUE 60 44 6.9 VGS = 4.5 V 4.0 VGS = 10 V 3.3 1.8 UNIT V nC nC mΩ mΩ V DEVICE CSD18542KCS Ordering Information(1) QTY MEDIA PACKAGE 50 Tube TO-220 Plastic Package SHIP Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-source voltage VGS Gate-to-source voltage Continuous drain current (package limited) VALUE 60 ±20 200 UNIT V V ID Continuous drain current (silicon limited), TC = 25°C 170 A Continuous drain current (silicon limited), TC = 100°C 120 IDM Pulsed drain current (1) 400 A PD Power dissipation 200 W TJ, Operating junction, Tstg Storage temperature –55 to 175 °C EAS Avalanche energy, single pulse ID = 75 A, L = 0.1 mH, RG = 25 Ω 281 mJ (1) Max RθJC = 0.6°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 12 TC = 25°C, I D = 100 A TC = 125°C, I D = 100 A 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V) D007 Gate Charge 10 9 ID = 100 A VDS = 30 V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 Qg - Gate Charge (nC) D00
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