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CSD18542KTT Datasheet Power MOSFETs

Manufacturer: Texas Instruments

Overview: Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18542KTT SLPS590A – MARCH 2016 – REVISED MARCH 2017 CSD18542KTT 60-V N-Channel NexFET™ Power MOSFET.

General Description

This 60-V, 3.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 60 ±20 200 UNIT V V Continuous Drain Current (Silicon Limited), ID TC = 25°C 170 A Continuous Drain Current (Silicon Limited), TC = 100°C 120 IDM Pulsed Drain Current(1) 400 A PD Power Dissipation 250 W TJ, Operating Junction, Tstg Storage Temperature –55 to 175 °C EAS Avalanche Energy, Single Pulse ID = 75 A, L = 0.1 mH, RG = 25 Ω 281 mJ (1) Max RθJC = 0.6°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 12 TC = 25°C, I D = 100 A TC = 125°C, I D = 100 A 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V) D007 Gate Charge 10 9 ID = 100 A VDS = 30 V 8 7 6 5 4 3 2 1 0

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low-Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • D2PAK Plastic Package 2.

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