Datasheet4U Logo Datasheet4U.com

CSD23382F4T - P-Channel Power MOSFET

This page provides the datasheet information for the CSD23382F4T, a member of the CSD23382F4 P-Channel Power MOSFET family.

Description

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

.

Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >2 kV HBM.
  • Rated >2 kV CDM.
  • Pb Terminal Plating.
  • Halogen Free.
  • RoHS Compliant 2.

📥 Download Datasheet

Datasheet preview – CSD23382F4T

Datasheet Details

Part number CSD23382F4T
Manufacturer Texas Instruments
File Size 1.38 MB
Description P-Channel Power MOSFET
Datasheet download datasheet CSD23382F4T Datasheet
Additional preview pages of the CSD23382F4T datasheet.

📁 Similar Datasheet

  • CSD20060 - ZERO RECOVERY RECTIFIER (ETC)
  • CSD20060D - ZERO RECOVERY RECTIFIER (ETC)
  • CSD202 - Bi-Directional Current and Power Monitor (AnalogySemi)
  • CSD20L45CT-A - Super Low Barrier High Voltage Power Rectifier (CITC)
  • CSD20N45 - N-Channel Trench Power MOSFET (CASS)
  • CSD-4xxx - NUMERIC/ALPHANUMBERIC DISPLAY (ETC)
  • CSD-822A9 - (CSD-822A9 / CSD-823A9) Digits Display (China Semiconductor)
  • CSD-822B7 - (CSD-822B7 / CSD-823B7) Digits Display (China Semiconductor)
  • CSD-822E - (CSD-822E / CSD-823E) Digits Display (China Semiconductor)
  • CSD-822G - (CSD-822G / CSD-823G) Digits Display (China Semiconductor)
Other Datasheets by Texas Instruments

Full PDF Text Transcription

Click to expand full text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23382F4 SLPS453C – MAY 2014 – REVISED OCTOBER 2014 CSD23382F4 12 V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Low Profile – 0.35 mm Max Height • Integrated ESD Protection Diode – Rated >2 kV HBM – Rated >2 kV CDM • Pb Terminal Plating • Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
Published: |