CSD23382F4T Description
This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
CSD23382F4T Key Features
- 1 Low On-Resistance
- Ultra-Low Qg and Qgd
- Ultra-Small Footprint (0402 Case Size)
- 1.0 mm × 0.6 mm
- Low Profile
- 0.35 mm Max Height
- Integrated ESD Protection Diode
- Rated >2 kV HBM
- Rated >2 kV CDM
- Pb Terminal Plating
CSD23382F4T Applications
- Optimized for Load Switch Applications
- Optimized for General Purpose Switching