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CSD25202W15 Datasheet P-Channel Power MOSFET

Manufacturer: Texas Instruments

General Description

This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile.

Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Top View Pin A1 Indicator G D S Symbol Source Gate D D S D S S Drain P0117-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 5.8 0.8 VGS = –1.8 V 40 VGS = –2.5 V 26 VGS = –4.5 V 21 –0.75 UNIT V nC nC mΩ mΩ mΩ V Device CSD25202W15 CSD25202W15T Ordering Information(1) Qty Media Package 3000 7-Inch Reel 250 7-Inch Reel 1.5-mm × 1.5-mm Wafer Level Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25202W15 SLPS508A – JUNE 2014 – REVISED JULY 2014 CSD25202W15 20-V P-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Low-Resistance.
  • Small Footprint 1.5 mm × 1.5 mm.
  • Gate ESD Protection.
  • 3 kV.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free.
  • Gate-Source Voltage Clamp 2.