Description
The LMG1205 is designed to drive both the highside and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration.
Features
- Independent high-side and low-side TTL logic inputs.
- 1.2-A peak source, 5-A sink current.
- High-side floating bias voltage rail
operates up to 100 VDC.
- Internal bootstrap supply voltage clamping.
- Split outputs for adjustable
turnon, turnoff strength.
- 0.6-Ω pulldown, 2.1-Ω pullup resistance.
- Fast propagation times (35 ns typical).
- Excellent propagation delay matching
(1.5 ns typical).
- Supply rail undervoltage lockout.
LMG1205 Datasheet
