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LMG1205 - Half Bridge GaN Driver

General Description

The LMG1205 is designed to drive both the highside and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration.

Key Features

  • Independent high-side and low-side TTL logic inputs.
  • 1.2-A peak source, 5-A sink current.
  • High-side floating bias voltage rail operates up to 100 VDC.
  • Internal bootstrap supply voltage clamping.
  • Split outputs for adjustable turnon, turnoff strength.
  • 0.6-Ω pulldown, 2.1-Ω pullup resistance.
  • Fast propagation times (35 ns typical).
  • Excellent propagation delay matching (1.5 ns typical).
  • Supply rail undervoltage lockout.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMG1205 SNOSD37B – MARCH 2017 – REVISED APRIL 2023 LMG1205 100-V, 1.2-A to 5-A, Half Bridge GaN Driver with Integrated Bootstrap Diode 1 Features • Independent high-side and low-side TTL logic inputs • 1.2-A peak source, 5-A sink current • High-side floating bias voltage rail operates up to 100 VDC • Internal bootstrap supply voltage clamping • Split outputs for adjustable turnon, turnoff strength • 0.6-Ω pulldown, 2.1-Ω pullup resistance • Fast propagation times (35 ns typical) • Excellent propagation delay matching (1.