LMG1205 Datasheet | Texas Instruments

SNOSD37B - MARCH 2017 - REVISED APRIL 2023 LMG1205 100-V, 1.2-A to 5-A, Half Bridge Ga N Driver with Integrated Bootstrap Diode 1 Features - Independent high-side and low-side TTL logic inputs - 1.2-A peak source, 5-A sink current - High-side floating bias voltage rail operates up to 100 VDC - Internal bootstrap supply voltage clamping - Split outputs for adjustable turnon, turnoff strength - 0.6-Ω pulldown, 2.1-Ω pullup resistance - Fast propagation times (35 ns typical) - Excellent propagation delay matching (1.5 ns typical) - Supply rail undervoltage lockout - Low power consumption 2 Applications - Current-fed push-pull converters - Half and full-bridge converters - Synchronous buck converters - Two-switch forward converters - Forward with active clamp converters 3 Description The LMG1205 is designed to drive both the highside and the low-side enhancement mode Gallium Nitride (Ga N) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode Ga N FETs. The inputs of the LMG1205 are TTL logic patible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a pact footprint and minimized package inductance. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) DSBGA...