LMG2100R044 Datasheet | Texas Instruments

SNOSDF9B - JULY 2023 - REVISED MARCH 2024 LMG2100R044 100V, 35A Ga N Half-Bridge Power Stage 1 Features - Integrated 4.4mΩ half-bridge Ga N FETs and driver - 90V continuous, 100V pulsed voltage rating - Package optimized for easy PCB layout - High slew rate switching with low ringing - 5V external bias power supply - Supports 3.3V and 5V input logic levels - Gate driver capable of up to 10MHz switching - Excellent propagation delay (33ns typical) and matching (2ns typical) - Internal bootstrap supply voltage clamping to prevent Ga N FET Overdrive - Supply rail undervoltage for lockout protection - Low power consumption - Exposed top QFN package for top-side cooling - Large GND pad for bottom-side cooling 2 Applications - Buck, boost, buck-boost converters - LLC converters - Solar inverters - Tele and server power - Motor drives - Power tools - Class-D audio amplifiers 3 Description The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (Ga N) FETs. The device consists of two 100V Ga N FETs driven by one high-frequency 90V Ga N FET driver in a half-bridge configuration. Ga N FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a pletely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs. The TTL logic patible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode Ga N FETs are within a safe operating...