LMG2650 Overview
The LMG2650 is a 650V 95mΩ GaN power-FET half bridge. The LMG2650 simplifies design, reduces ponent count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 6mm by 8mm QFN package. Programmable turn-on slew rates provide EMI and ringing control.
LMG2650 Key Features
- 650V GaN power-FET half bridge
- 95mΩ low-side and high-side GaN FETs
- Integrated gate drivers with <100ns low
- Programmable turn-on slew rate control
- Current-sense emulation with high-bandwidth and
- Low-side referenced (INH) and high-side
- Low-side (INL) / high-side (INH) gate-drive
- High-side (INH) gate-drive signal level shifter
- Smart-switched bootstrap diode function
- High-side start up : <8µs