LMG1210 Overview
Key Specifications
Description
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.
Key Features
- 1 Up to 50-MHz operation
- 10-ns typical propagation delay
- 3.4-ns high-side to low-side matching
- Minimum pulse width of 4 ns
- Two control input options – Single PWM input with adjustable dead time – Independent input mode
