Description
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficiency applications that
Features
- 1 Up to 50-MHz operation.
- 10-ns typical propagation delay.
- 3.4-ns high-side to low-side matching.
- Minimum pulse width of 4 ns.
- Two control input options.
- Single PWM input with adjustable dead time.
- Independent input mode.
- 1.5-A peak source and 3-A peak sink currents.
- External bootstrap diode for flexibility.
- Internal LDO for adaptability to voltage rails.
- High 300-V/ns CMTI.
- HO to LO capac.
LMG1210 Datasheet
