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LMG1210 - half-bridge MOSFET and GaN FET driver

General Description

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficiency applications that

Key Features

  • 1 Up to 50-MHz operation.
  • 10-ns typical propagation delay.
  • 3.4-ns high-side to low-side matching.
  • Minimum pulse width of 4 ns.
  • Two control input options.
  • Single PWM input with adjustable dead time.
  • Independent input mode.
  • 1.5-A peak source and 3-A peak sink currents.
  • External bootstrap diode for flexibility.
  • Internal LDO for adaptability to voltage rails.
  • High 300-V/ns CMTI.
  • HO to LO capac.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community LMG1210 SNOSD12D – NOVEMBER 2018 – REVISED JANUARY 2019 LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz 1 Features •1 Up to 50-MHz operation • 10-ns typical propagation delay • 3.4-ns high-side to low-side matching • Minimum pulse width of 4 ns • Two control input options – Single PWM input with adjustable dead time – Independent input mode • 1.