LMG1210 Description
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, highefficiency applications that.
LMG1210 Key Features
- 1 Up to 50-MHz operation
- 10-ns typical propagation delay
- 3.4-ns high-side to low-side matching
- Minimum pulse width of 4 ns
- Two control input options
- Single PWM input with adjustable dead time
- Independent input mode
- 1.5-A peak source and 3-A peak sink currents
- External bootstrap diode for flexibility
- Internal LDO for adaptability to voltage rails
LMG1210 Applications
- 1 Up to 50-MHz operation