TMS626162 Datasheet | Texas Instruments

description The TMS626162 device is a high-speed 16 777 216-bit synchronous dynamic randomaccess memory (SDRAM) organized as two banks of 524 288 words with 16 bits per word. All inputs and outputs of the TMS626162 series are patible with the LVTTL interface. PIN NOMENCLATURE A0- A10 A11 CAS CKE CLK CS DQ0- DQ15 DQML, DQMU NC RAS VCC VCCQ VSS VSSQ W Address Inputs A0- A10 Row Addresses A0- A7 Column Addresses A10 Automatic-Precharge Select Bank Select Column-Address Strobe Clock Enable System Clock Chip Select SDRAM Data Input/Output Data/Output Mask Enables No Connect Row-Address Strobe Power Supply (3.3-V Typ) Power Supply for Output Drivers (3.3-V Typ) Ground Ground for Output Drivers Write Enable Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1997, Texas Instruments Incorporated - POST OFFICE BOX 1443 HOUSTON, TEXAS 77251- 1443 TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E - FEBRUARY 1995 - REVISED APRIL 1997 description (conti...