Datasheet4U Logo Datasheet4U.com

TPIC5423L - logic-level power DMOS array

Description

The TPIC5423L is a monolithic gate-protected logic-level power DMOS array that consists of four electrically isolated independent N-channel enhancement-mode DMOS transistors.

Features

  • integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the humanbody model of a 100-pF capacitor in series with a 1.5-kΩ resistor. DW.

📥 Download Datasheet

Datasheet preview – TPIC5423L

Datasheet Details

Part number TPIC5423L
Manufacturer Texas Instruments
File Size 188.96 KB
Description logic-level power DMOS array
Datasheet download datasheet TPIC5423L Datasheet
Additional preview pages of the TPIC5423L datasheet.

📁 Similar Datasheet

  • TPI - Tripolar protection (STMicroelectronics)
  • TPI-0805MH - Multilayer Ceramic SMD Varistor (ETC)
  • TPI-0805ML - Multilayer Ceramic SMD Varistor (ETC)
  • TPI-1206MH - Multilayer Ceramic SMD Varistor (ETC)
  • TPI-1812MH - Multilayer Ceramic SMD Varistor (ETC)
  • TPI-2220MH - Multilayer Ceramic SMD Varistor (ETC)
  • TPI0505S - 1W 3KVDC Isolation & Regulated Dual Output DC-DC Converters (TOPPOWER)
  • TPI0505S-2W - 2W 3KVDC Isolation & Regulated Dual Output DC-DC Converters (TOPPOWER)
  • TPI0509S - 1W 3KVDC Isolation & Regulated Dual Output DC-DC Converters (TOPPOWER)
  • TPI0509S-2W - 2W 3KVDC Isolation & Regulated Dual Output DC-DC Converters (TOPPOWER)
Other Datasheets by Texas Instruments

Full PDF Text Transcription

Click to expand full text
TPIC5423L 4-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY SLIS045 – NOVEMBER 1994 • Low rDS(on) . . . 0.32 Ω Typ • Voltage Output . . . 60 V • Input Protection Circuitry . . . 18 V • Pulsed Current . . . 4 A Per Channel • Extended ESD Capability . . . 4000 V • Direct Logic-Level Interface description The TPIC5423L is a monolithic gate-protected logic-level power DMOS array that consists of four electrically isolated independent N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the humanbody model of a 100-pF capacitor in series with a 1.
Published: |