TS3DDR3812 Datasheet | Texas Instruments

FEATURES - patible with DDR3 SDRAM Standard (JESD79-3D) - Wide Bandwidth of 1.675 GHz - Low Propagation Delay (tpd = 40 ps Typ) - Low Bit-to-Bit Skew (tsk(o) = 6 ps Typ) - Low and Flat ON-State Resistance (r ON = 8 Ω Typ) - Low Input/Output Capacitance (CON = 5.6 p F Typ) - Low Crosstalk (XTALK = - 43 d B, Typ at 250 MHz) - VCC Operating Range from 3 V to 3.6 V - Rail-to-Rail Switching on Data I/O Ports (0 to VCC) - Separate Switch Control Logic for Upper and Lower 6-Channels - Dedicated Enable Logic Supports Hi-Z Mode - IOFF Protection Prevents Current Leakage in Powered Down State (VCC = 0 V) - ESD Performance Tested Per JESD22 - 2000 V Human Body Model (A114B, Class II) - 1000 V Charged Device Model (C101) - 42-pin RUA Package (9 × 3.5 mm, 0.5 mm Pitch) APPLICATIONS - DDR3 Signal Switching - DIMM Modules - Notebook/Desktop PCs - Servers Figure 1. RUA PACKAGE (TOP VIEW) B1 C1 B0 C0 VCC 1 A0 2 A1 3 A2 4 A3 5 A4 6 A5 7 EN 8 SEL1 9 SEL2 10 A6 11 A7 12 A8 13 A9 14 A10 15 A11 16 VCC 17 42 41 40...