TS3DDR4000 Datasheet | Texas Instruments

Features - 1 Wide VDD Range: 2.375 V - 3.6 V - High Bandwidth: 5.6 GHz Typical (single-ended); 6.0 GHz Typical (differential) - Low Switch On-Resistance (RON): 8 Ω Typical - Low Bit-to-Bit Skew: 3ps Typical; 6ps Max across All Channels - Low Crosstalk: - 34 d B Typical at 1067 MHz - Low Operating Current: 40 µA Typical - Low-Power Mode with Low Current Consumption: 2 µA Typical - IOFF Protection Prevents Current Leakage in Powered Down State (VDD = 0 V) - Supports POD_12, SSTL_12, SSTL_15 and SSTL_18 Signaling - ESD Performance: - 3-k V Human Body Model (A114B, Class II) - 1-k V Charged Device Model (C101) - 8 mm x 3 mm 48-balls 0.65-mm Pitch ZBA Package 2 Applications - NVDIMM Modules - Enterprise Data Systems and Servers - Notebook/Desktop PCs - General DDR3/DDR4 Signal Switching - General High-Speed Signal Switching 3 Description The TS3DDR4000 is 1:2 or 2:1 high speed DDR2/DDR3/DDR4 switch that offers 12-bit wide bus switching. The A port can be switched to the B or C port for all bits simultaneously. Designed for operation in DDR2, DDR3 and DDR4 memory bus systems, the TS3DDR4000 uses a proprietary architecture that delivers high bandwidth (single-ended - 3d B bandwidth at 5.6 GHz), low insertion loss at low frequency, and very low propagation delay. The TS3DDR4000 is 1.8 V logic patible, and all switches are bi-directional for added design flexibility. The TS3DDR4000 also offers a low-power mode, in which all channels bee high-Z and the device consumes minimal power. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) NFBGA (48) 8.00 mm x 3.00 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Application Diagram NVDIMM...