natlinear LN2310
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | LN2310 |
|---|---|
| Datasheet | LN2310 Download |
| Manufacturer | natlinear |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
VDSS 30V Product Summary ID 5.8A 5A RDS(ON)(mΩ)TYP 28 @ VGS=10V 31 @ VGS=4.5V●
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● SOT-23-3L package
● Package
● SOT-23-3L LN2310
● Ordering Information Part Number LN2310 Storage Temperature -55°C to +150°C
●
ABSOLUTE MAXIMUM RATINGS
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Maximum power dissipation Operating junction Temperature range Package SOT-23-3L Devices Per Reel 3000 (TA=25℃ unless otherwise noted) symbol limit unit VDS 30 V VGS ±20 V ID 5.8 A IDM 30 A PD 1.25 W Tj -55—150 ℃ Rev.1.0 —June. 5, 2012 1●
ELECTRICAL CHARACTERISTICS
LN2310 (TA=25℃ unless otherwise noted) Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate thr
