natlinear LN2311
P-Channel Enhancement Mode Field Effect Transistor
GENERAL DESCRIPTION
VDSS -30V Product Summary ID -4.4A RDS(ON)(mΩ)TYP 52 @ VGS=-10V 65 @ VGS=-4.5V●
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● SOT-23-3L/B package
● Package
● SOT-23-3L/B
● SOT-89-3L 3 D GS 12 SOT-23-3L/B (Top View) S G D LN2311
● Ordering Information G DS 123 SOT-89-3L (TOP VIEW) Part Number LN2311 Storage Temperature -55°C to +150°C -55°C to +150°C Package SOT-23-3L/B SOT-89-3L Devices Per Reel 3000 3000 Rev.1.0 —June. 5, 2012 1
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ABSOLUTE MAXIMUM RATINGS
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Maximum power dissipation Operating junction Temperature range LN2311 (TA=25℃ unless otherwise noted) symbol limit unit VDS -30 V VGS ±20 V ID -4.4 A IDM -30 A PD 1.25 W Tj -55—150 ℃●
ELECTRICAL CHARACTERISTICS
(TA=25