NP6661BQR
Description
Schematic diagram
The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
Application
N-CH
P-CH
Marking and pin assignment
PDFN3×3-8L
（Top View）
S1 1 G1 2 S2 3 G2 4
NP6661B XXXX
8 D1 7 D1 6 D2 5 D2
- Pch+Nch plementary MOSFET for DC-FAN
- H-Bridge application
HF Pb
Ordering Information
Part Number NP6661BQR-G
Storage Temperature -55°C to +150°C
Package PDFN3- 3-8L
Devices Per Reel 5000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Drain-s...
