NP6661BQR Datasheet PDF - natlinear N And P-Channel Enhancement Mode MOSFET Specs

NP6661BQR - N And P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.

Datasheet Details

Part number	NP6661BQR
Manufacturer	natLinear
File Size	557.78 KB
Description	N And P-Channel Enhancement Mode MOSFET
Datasheet	NP6661BQR Datasheet
Additional preview pages of the NP6661BQR datasheet.

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Full PDF Text Transcription

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NP6661BQR N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.

Published: Jul 23, 2024 |