natlinear NP6661BQR
The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | NP6661BQR |
|---|---|
| Datasheet | NP6661BQR Download |
| Manufacturer | natlinear |
| Description | N And P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating Application N-CH P-CH Marking and pin assignment PDFN3×3-8L （Top View） S1 1 G1 2 S2 3 G2 4 NP6661B XXXX 8 D1 7 D1 6 D2 5 D2
● Pch+Nch Complementary MOSFET for DC-FAN
● H-Bridge application HF Pb Ordering Information Part Number NP6661BQR-G Storage Temperature -55°C to +150°C Package PDFN3*3-8L Devices Per Reel 5000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Operating junction Temperature range Drain Current-Continuous TA=25°C (Silicon Limited) TA=75°C Pulsed Drain Current (Package Limited) Rev.1.1 —Nov. 8. 2017 Symbol VDS VGS Tj ID IDM 1 Limit Unit...
