NP6661BQR Description
Schematic diagram The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
NP6661BQR Key Features
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- Pch+Nch plementary MOSFET for DC-FAN
- H-Bridge application