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NP6661BQR - N And P-Channel Enhancement Mode MOSFET

Datasheet Details

Part number NP6661BQR
Manufacturer natlinear
File Size 557.78 KB
Description N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP6661BQR Datasheet

General Description

The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Overview

NP6661BQR N And P-Channel Enhancement Mode MOSFET.

Key Features

  • N-channel: VDS =30V,ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel: VDS =-30V,ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.