natlinear NP6667SR
The NP6667SR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | NP6667SR |
|---|---|
| Datasheet | NP6667SR Download |
| Manufacturer | natlinear |
| Description | N And P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● N-channel： VDS =30V，ID =10A RDS(ON)=16mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-15A RDS(ON)=17.5mΩ (typical) @ VGS=-10V RDS(ON)=24mΩ (typical) @ VGS=-4.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested HF Pb Application N-CH P-CH Marking and pin assignment SOP-8 (TOP VIEW) S2 1 G2 2 S1 3 G1 4 NP6667 XXXX YYYY 8 D2 7 D2 6 D1 5 D1 XXXX—Wafer Information YYYY—Quality Code
● Pch+Nch Complementary MOSFET for DC-FAN
● H-Bridge application Ordering Information Part Number NP6667SR-G Storage Temperature -55°C to +150°C Package SOP-8 Devices Per Reel 4000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Operating junction Temperature range Drain Current-Continuous TA=25°C (Silicon Limited) TA=75°C Symbol VDS VGS Tj ID Limit N P 30 -30 ±20 ±20 -55—150 -55—150 10 -15 5 -9 Unit V V ℃ A Rev.1.1 —May.
