BSH205G2
BSH205G2 is P-channel Trench MOSFET manufactured by Nexperia.
20 V, P-channel Trench MOSFET
29 April 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Low on-state resistance
- Trench MOSFET technology
- Enhanced power dissipation capability of 890 m W
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
Min Typ Max Unit
- - -20...
