Datasheet4U Logo Datasheet4U.com

BSH205G2 - P-channel Trench MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Low on-state resistance.
  • Trench MOSFET technology.
  • Enhanced power dissipation capability of 890 mW.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

Datasheet preview – BSH205G2

Datasheet Details

Part number BSH205G2
Manufacturer nexperia
File Size 730.07 KB
Description P-channel Trench MOSFET
Datasheet download datasheet BSH205G2 Datasheet
Additional preview pages of the BSH205G2 datasheet.

📁 Similar Datasheet

  • BSH205 - P-channel enhancement mode MOS transistor (NXP)
  • BSH205 - P-Channel 20V MOSFET (VBsemi)
  • BSH201 - P-channel enhancement mode MOS transistor (NXP)
  • BSH201 - P-Channel 60V MOSFET (VBsemi)
  • BSH202 - P-channel enhancement mode MOS transistor (NXP)
  • BSH203 - P-channel enhancement mode MOS transistor (NXP)
  • BSH206 - P-channel enhancement mode MOS transistor (NXP)
  • BSH207 - P-channel enhancement mode MOS transistor (NXP)
  • BSH299 - P-channel enhancement mode MOS transistor (NXP)
  • BSH101 - N-channel enhancement mode MOS transistor (NXP)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced power dissipation capability of 890 mW • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.
Published: |