BSH205G2A Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
BSH205G2A Key Features
- Low threshold voltage
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- Very fast switching
- AEC-Q101 qualified