BSH205G2A
BSH205G2A is P-channel Trench MOSFET manufactured by Nexperia.
20 V, P-channel Trench MOSFET
13 October 2020
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- Very fast switching
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source voltage Tj = 25 °C
- -
-20
VGS gate-source voltage
-8
- 8
ID drain current
VGS = -4.5 V; Tamb = 25...
