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BSH205G2A - P-channel Trench MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Extended temperature range Tj = 175 °C.
  • Trench MOSFET technology.
  • Very fast switching.
  • AEC-Q101 qualified 3.

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BSH205G2A 20 V, P-channel Trench MOSFET 13 October 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Trench MOSFET technology • Very fast switching • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -8 - 8 ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - - -2.