• Part: BSR31-Q
  • Description: 60V 1A PNP medium power transistor
  • Category: Transistor
  • Manufacturer: Nexperia
  • Size: 170.29 KB
Download BSR31-Q Datasheet PDF
Nexperia
BSR31-Q
description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN plement: BSR41-Q 2. Features and benefits - High current - High power dissipation capability - Exposed heatsink for excellent thermal and electrical conductivity - Qualified according to AEC-Q101 and remended for use in automotive applications 3. Applications - Linear voltage regulators - High-side switches - Battery-driven devices - MOSFET drivers - Amplifiers 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current h FE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = -5 V; IC = -100 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tamb = 25 °C Min Typ Max Unit - - -60 V - - - - - -1 -2 5. Pinning information Table 2. Pinning information Pin Symbol Description E emitter C...