BUK6D38-30E
BUK6D38-30E is N-channel MOSFET manufactured by Nexperia.
description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Extended temperature range Tj = 175 °C
- Side wettable flanks for optical solder inspection
- Electro Static Discharge (ESD) protection > 1.5 k V HBM (class H1C)
- Trench MOSFET technology
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tsp = 25 °C Tsp = 25 °C
VGS = 10 V; ID = 5.5 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20
- 20 V
- - 17 A
- - 19 W
- 29 38 mΩ
Nexperia
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
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