BUK6D385-100E - N-channel MOSFET

Product Overview

nexperia

Datasheet Details

Part number	BUK6D385-100E
Manufacturer	nexperia
File Size	278.58 KB
Description	N-channel MOSFET
Datasheet	BUK6D385-100E Datasheet
Additional preview pages of the BUK6D385-100E datasheet.

Product details

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Extended temperature range Tj = 175 °C.
Side wettable flanks for optical solder inspection.
ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2).
Trench MOSFET technology.
AEC-Q101 qualified 3.

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Published: Jul 28, 2019 |