BUK6D43-40P
BUK6D43-40P is N-channel MOSFET manufactured by Nexperia.
description
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Extended temperature range Tj = 175 ℃
- Side wettable flanks for optical solder inspection
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Trench MOSFET technology
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -10 V; Tsp = 25 °C
Ptot total power dissipation Tsp = 25 °C
Static characteristics
RDSon drain-source on-state VGS = -10 V; ID = -6 A; Tj = 25 °C resistance
Min Typ Max Unit
- - -40 V
-20
- 20 V
- - -14 A
- - 15 W
- 30 43 mΩ
Nexperia
40 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source
Simplified outline
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