BUK6D43-60E
BUK6D43-60E is N-channel Trench MOSFET manufactured by Nexperia.
description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Extended temperature range Tj = 175 °C
- Side wettable flanks for optical solder inspection
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Trench MOSFET technology
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tsp = 25 °C
Ptot total power dissipation Tsp = 25 °C
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C resistance
Min Typ Max Unit
- - 60...
