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BUK6Q66-60P - 60V P-channel Trench MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Trench MOSFET technology.
  • Side-wettable flanks for optical solder inspection.
  • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint).
  • AEC-Q101 qualified 3.

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BUK6Q66-60P 60 V, P-channel Trench MOSFET 15 May 2025 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Side-wettable flanks for optical solder inspection • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint) • AEC-Q101 qualified 3. Applications • Reverse polarity protection • High-speed line driver • High-side load switch • Relay driver 4. Quick reference data Table 1.