BUK6Q8R2-30P
BUK6Q8R2-30P is 30V P-channel Trench MOSFET manufactured by Nexperia.
description
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Trench MOSFET technology
- Side-wettable flanks for optical solder inspection
- Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)
- AEC-Q101 qualified
3. Applications
- Reverse polarity protection
- High-speed line driver
- High-side load switch
- Relay driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon drain-source on-state resistance
Conditions 25 °C ≤ Tj ≤ 175 °C Tj = 25 °C VGS = -10 V; Tmb = 25 °C Tmb = 25 °C
VGS = -10 V; ID = -12 A; Tj = 25 °C
Min Typ Max Unit
- -
-30 V
-20
- 20
- -
-82 A
- -
- 6.5 8.2 mΩ
Nexperia
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning...
