BUK6Q8R2-30P Description
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
BUK6Q8R2-30P Key Features
- Logic-level patible
- Trench MOSFET technology
- Side-wettable flanks for optical solder inspection
- Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)
- AEC-Q101 qualified
BUK6Q8R2-30P Applications
- Reverse polarity protection