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GAN111-650WSB - Gallium Nitride (GaN) FET

General Description

The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package.

offering superior reliability and performance.

2.

Key Features

  • Ultra-low reverse recovery charge.
  • Simple gate drive (0 V to +10 V or +12 V).
  • Robust gate oxide (±20 V capability).
  • High gate threshold voltage (+4 V) for very good gate bounce immunity.
  • Very low source-drain voltage in reverse conduction mode.
  • Transient over-voltage capability 3.

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TO-247-3L GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package 24 June 2024 Product data sheet 1. General description The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefits • Ultra-low reverse recovery charge • Simple gate drive (0 V to +10 V or +12 V) • Robust gate oxide (±20 V capability) • High gate threshold voltage (+4 V) for very good gate bounce immunity • Very low source-drain voltage in reverse conduction mode • Transient over-voltage capability 3.