GAN111-650WSB Description
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that bines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies offering superior reliability and performance.
GAN111-650WSB Key Features
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or +12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability
GAN111-650WSB Applications
- Hard and soft switching converters for industrial and data power