GAN111-650WSB Datasheet | Nexperia

TO-247-3L 650 V, 97 m Ohm Gallium Nitride (Ga N) FET in a TO-247 package 24 June 2024 Product data sheet 1. General description The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (Ga N) FET in a TO-247 package. It is a normally-off device that bines Nexperia’s latest high-voltage Ga N HEMT H2 technology and low-voltage silicon MOSFET technologies - offering superior reliability and performance. 2. Features and benefits - Ultra-low reverse recovery charge - Simple gate drive (0 V to +10 V or +12 V) - Robust gate oxide (±20 V capability) - High gate threshold voltage (+4 V) for very good gate bounce immunity - Very low source-drain voltage in reverse conduction mode - Transient over-voltage capability 3. Applications - Hard and soft switching converters for industrial and data power - AC/DC Bridgeless totem-pole PFC - DC/DC High-frequency resonant converters - Data and tele (AC/DC and DC/DC) converters - Solar (PV) inverters - Servo motor drives - TV PSU and LED drivers 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction...