GAN190-650FBE
GAN190-650FBE is GaN FET manufactured by Nexperia.
DFN5060-5
650 V, 190 m Ohm Gallium Nitride (Ga N) FET in a DFN
5 mm x 6 mm package
19 April 2023
Product data sheet
1. General description
The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (Ga N) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.
2. Features and benefits
- Enhancement mode
- normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- ESD protection
- Ro HS, Pb-free, REACH-pliant
- High efficiency and high power density
- Low package inductance and low package resistance
3. Applications
- High power density and high efficiency power conversion
- AC-to-DC converters, totem pole PFC
- DC-to-DC converters
- Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
- Data and tele (AC-to-DC and DC-to-DC) converters
- Motor drives
- Solar (PV) inverters
- Class D audio amplifiers, TV PSU and LED drivers
4. Quick reference data
Table 1. Quick reference...
