GAN190-650FBE Description
The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.
GAN190-650FBE Key Features
- Enhancement mode
- normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard