GAN039-650NBB
GAN039-650NBB is Gallium Nitride (GaN) FET manufactured by Nexperia.
CCPAK1212
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
28 May 2024
Product data sheet
1. General description
The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that bines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies
- offering superior reliability and performance.
2. Features and benefits
- Simplified driver design as standard level MOSFET gate drivers can be used:
- 0 V to 12 V drive voltage
- Gate threshold voltage VGSth of 4 V
- Robust gate oxide with ±20 V VGS rating
- High gate threshold voltage of 4 V for gate bounce immunity
-...
