GAN063-650WSA Description
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that bines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies offering superior reliability and performance.
GAN063-650WSA Key Features
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability (800 V)
GAN063-650WSA Applications
- Hard and soft switching converters for industrial and data power