Description
The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package.
offering superior reliability and perform
Features
- Fully automotive qualified to AEC-Q101:.
- 175 °C rating suitable for thermally demanding environments.
- Simplified driver design as standard level MOSFET gate drivers can be used:.
- 0 V to 12 V drive voltage.
- Gate threshold voltage VGSth of 4 V.
- Robust gate oxide with ±20 V VGS rating.
- High gate threshold voltage of 4 V for gate bounce immunity.
- Low body diode Vf for reduced losses and simplified dead-time adjustments.
GAN039-650NBBA Datasheet
