GAN039-650NBBA Overview
The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that bines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies offering superior reliability and performance. This product has been fully designed and qualified to meet AEC-Q101 requirements.
GAN039-650NBBA Key Features
- Fully automotive qualified to AEC-Q101
- 175 °C rating suitable for thermally demanding environments
- Simplified driver design as standard level MOSFET gate drivers can be used
- 0 V to 12 V drive voltage
- Gate threshold voltage VGSth of 4 V
- Robust gate oxide with ±20 V VGS rating
- High gate threshold voltage of 4 V for gate bounce immunity
- Low body diode Vf for reduced losses and simplified dead-time adjustments
- Transient over-voltage capability for increased robustness
- CCPAK package technology