GAN039-650NBBA
GAN039-650NBBA is GaN FET manufactured by Nexperia.
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
19 April 2021
Objective data sheet
1. General description
The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that bines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies
- offering superior reliability and performance.
This product has been fully designed and qualified to meet AEC-Q101 requirements.
2. Features and benefits
- Fully automotive qualified to AEC-Q101:
- 175 °C rating suitable for thermally demanding environments
- Simplified driver design as standard level...
