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GAN039-650NBBA - GaN FET

General Description

The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package.

offering superior reliability and perform

Key Features

  • Fully automotive qualified to AEC-Q101:.
  • 175 °C rating suitable for thermally demanding environments.
  • Simplified driver design as standard level MOSFET gate drivers can be used:.
  • 0 V to 12 V drive voltage.
  • Gate threshold voltage VGSth of 4 V.
  • Robust gate oxide with ±20 V VGS rating.
  • High gate threshold voltage of 4 V for gate bounce immunity.
  • Low body diode Vf for reduced losses and simplified dead-time adjustments.

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GAN039-650NBBA 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 19 April 2021 Objective data sheet 1. General description The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. This product has been fully designed and qualified to meet AEC-Q101 requirements. 2.