GAN080-650EBE
GAN080-650EBE is GaN FET manufactured by Nexperia.
DFN8080-8
650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN
8 mm x 8 mm package
5 May 2023
Product data sheet
1. General description
The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.
2. Features and benefits
- Enhancement mode
- normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- ESD protection
- RoHS, Pb-free, REACH-pliant
- High efficiency and high power density
- Low package inductance and low package resistance
3....
