GAN041-650WSB Datasheet | Nexperia

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12 January 2021 Product data sheet 1. General description The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that bines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies - offering superior reliability and performance. 2. Features and benefits - Ultra-low reverse recovery charge - Simple gate drive (0 V to +10 V or 12 V) - Robust gate oxide (±20 V capability) - High gate threshold voltage (+4 V) for very good gate bounce immunity - Very low source-drain voltage in reverse conduction mode - Transient...