Datasheet4U Logo Datasheet4U.com

GAN041-650WSB - GaN FET

General Description

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package.

offering superior reliability and performance.

2.

Key Features

  • Ultra-low reverse recovery charge.
  • Simple gate drive (0 V to +10 V or 12 V).
  • Robust gate oxide (±20 V capability).
  • High gate threshold voltage (+4 V) for very good gate bounce immunity.
  • Very low source-drain voltage in reverse conduction mode.
  • Transient over-voltage capability 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Nexperia

Part Number Description
GAN039-650NBB Gallium Nitride (GaN) FET
GAN039-650NBBA GaN FET
GAN039-650NTB Gallium Nitride (GaN) FET
GAN063-650WSA GaN FET
GAN080-650EBE GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12 January 2021 Product data sheet 1. General description The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefits • Ultra-low reverse recovery charge • Simple gate drive (0 V to +10 V or 12 V) • Robust gate oxide (±20 V capability) • High gate threshold voltage (+4 V) for very good gate bounce immunity • Very low source-drain voltage in reverse conduction mode • Transient over-voltage capability 3.