Datasheet4U Logo Datasheet4U.com

GAN039-650NTB - Gallium Nitride (GaN) FET

General Description

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package.

offering superior reliability and performance.

2.

Key Features

  • Simplified driver design as standard level MOSFET gate drivers can be used:.
  • 0 V to 12 V drive voltage.
  • Gate threshold voltage VGSth of 4 V.
  • Robust gate oxide with ±20 V VGS rating.
  • High gate threshold voltage of 4 V for gate bounce immunity.
  • Low body diode Vf for reduced losses and simplified dead-time adjustments.
  • Transient over-voltage capability for increased robustness.
  • CCPAK package technology:.
  • Improved reli.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Nexperia

Part Number Description
GAN039-650NBB Gallium Nitride (GaN) FET
GAN039-650NBBA GaN FET
GAN041-650WSB GaN FET
GAN063-650WSA GaN FET
GAN080-650EBE GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CCPAK1212i GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 5 December 2023 Product data sheet 1. General description The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2.