GANE1R8-100QBA Overview
The GANE1R8-100QBA is a a general purpose 100 V, 1.8 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
GANE1R8-100QBA Key Features
- Enhancement mode
- normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard