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GANE1R8-100QBA - 100V Gallium Nitride FET

Description

The GANE1R8-100QBA is a a general purpose 100 V, 1.8 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package.

It is a normally-off e-mode device offering superior performance and very low on-state resistance.

2.

Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

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Datasheet Details

Part number GANE1R8-100QBA
Manufacturer nexperia
File Size 302.23 KB
Description 100V Gallium Nitride FET
Datasheet download datasheet GANE1R8-100QBA Datasheet
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Full PDF Text Transcription

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VQFN7 GANE1R8-100QBA 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 13 March 2025 Product data sheet 1. General description The GANE1R8-100QBA is a a general purpose 100 V, 1.8 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm 3.
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