GANE1R8-100QBA - 100V Gallium Nitride FET

Nexperia

Datasheet Details

Part number	GANE1R8-100QBA
Manufacturer	Nexperia
File Size	302.23 KB
Description	100V Gallium Nitride FET
Datasheet	GANE1R8-100QBA Datasheet

General Description

The GANE1R8-100QBA is a a general purpose 100 V, 1.8 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package.

It is a normally-off e-mode device offering superior performance and very low on-state resistance.

Overview

VQFN7 GANE1R8-100QBA 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 13 March 2025 Product data sheet 1.

Key Features

Enhancement mode - normally-off power switch.
Ultra high frequency switching capability.
No body diode.
Low gate charge, low output charge.
Qualified for standard.

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