GANE2R7-100CBA - 100V Gallium Nitride FET

Nexperia

Datasheet Details

Part number	GANE2R7-100CBA
Manufacturer	Nexperia
File Size	635.99 KB
Description	100V Gallium Nitride FET
Datasheet	GANE2R7-100CBA Datasheet

General Description

The GANE2R7-100CBA is a a general purpose 100 V, 2.7 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP).

It is a normally-off e-mode device offering superior performance and very low on-state resistance.

Overview

WLCSP22 GANE2R7-100CBA 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) 14 March 2025 Product data sheet 1.

Key Features

Enhancement mode - normally-off power switch.
Ultra high frequency switching capability.
No body diode.
Low gate charge, low output charge.
Qualified for standard.

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