NX3020NAKQB-Q Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
NX3020NAKQB-Q Key Features
- Logic-level patible
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection
- Side wettable flanks for optical solder inspection
- AEC-Q101 qualified