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NX3020NAKRA-Q - 30V dual N-channel Trench MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection.
  • AEC-Q101 qualified 3.

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NX3020NAKRA-Q 30 V, dual N-channel Trench MOSFET 11 August 2025 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.