PBHV8115T - 1A NPN high-voltage low VCEsat transistor

Nexperia

General Description

NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Key Features

High voltage.
Low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High collector current gain (hFE) at high IC.
Small SMD plastic package 3.

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PBHV8115T 1a npn high-voltage low vcesat transistor by Nexperia - Datasheet Preview

Datasheet Details

Part number	PBHV8115T
Manufacturer	Nexperia
File Size	279.05 KB
Description	1A NPN high-voltage low VCEsat transistor
Datasheet	PBHV8115T Datasheet

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PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat transistor 1 January 2023 Product data sheet 1. General description NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • Small SMD plastic package 3. Applications • LED driver for LED chain module • LCD backlighting • High Intensity Discharge (HID) front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1.